Hybrid subtractive etch/metal fill process for fabricating interconnects

ABSTRACT

In one example, a method for fabricating an integrated circuit includes patterning a layer of a first conductive metal, via a subtractive etch process, to form a plurality of lines for connecting semiconductor devices on the integrated circuit. A large feature area is formed outside of the plurality of conductive lines via a metal fill process using a second conductive metal.

FIELD OF THE DISCLOSURE

The present disclosure relates generally to the fabrication ofintegrated circuits and relates more specifically the fabrication ofinterconnects for connecting individual devices on an integratedcircuit.

BACKGROUND OF THE DISCLOSURE

As the feature sizes in complementary metal-oxide-semiconductor (CMOS)technology continue to shrink, it becomes increasingly difficult tofabricate the metal interconnects using conventional processingtechniques. For example, using a damascene process to fill trenches withcopper often results in undesirable effects including poor liner/seedcoverage on the trench walls, pinch off at the trench mouth, andreentrant reactive ion etch (RIE) profiles. In addition, the increasingratio of the liner to copper, copper grain growth, and copper grainscattering phenomena result in increased copper resistivity, which makesthe copper less effective as an interconnect material.

SUMMARY OF THE DISCLOSURE

In one example, a method for fabricating an integrated circuit includespatterning a layer of a first conductive metal, via a subtractive etchprocess, to form a plurality of lines for connecting semiconductordevices on the integrated circuit. A large feature area is formedoutside of the plurality of conductive lines via a metal fill processusing a second conductive metal.

In another example, an integrated circuit includes a wafer, a layer ofdielectric material deposited on the wafer, a plurality of conductivelines formed on the layer of dielectric material, and a plurality ofvias coupled to the plurality of conductive lines and extending throughthe layer of dielectric material. Interfaces between the plurality ofconductive lines and the plurality of vias are formed as continuouslines of metal.

BRIEF DESCRIPTION OF THE DRAWINGS

The teachings of the present disclosure can be readily understood byconsidering the following detailed description in conjunction with theaccompanying drawings, in which:

FIGS. 1A-1G illustrate top views of an integrated circuit during variousstages of a first fabrication process according to examples of thepresent disclosure;

FIGS. 2A-2G illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 1A-1G taken along line A-A′ of FIG. 2Aduring the various stages of the first fabrication process;

FIGS. 3A-3G illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 1A-1G taken along line B-B′ of FIG. 2Aduring the various stages of the first fabrication process;

FIGS. 4A-4H illustrate top views of an integrated circuit during variousstages of a second fabrication process;

FIGS. 5A-5H illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 4A-4H taken along line A-A′ of FIG. 4Aduring the various stages of the second fabrication process;

FIGS. 6A-6H illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 4A-4H taken along line B-B′ of FIG. 4Aduring the various stages of the second fabrication process;

FIGS. 7A-7D illustrate top views of an integrated circuit during variousstages of a third fabrication process;

FIGS. 8A-8D illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 7A-7D taken along line A-A′ of FIG. 7Aduring the various stages of the third fabrication process;

FIGS. 9A-9D illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 7A-7D taken along line B-B′ of FIG. 7Aduring the various stages of the third fabrication process;

FIGS. 10A-10C illustrate top views of an integrated circuit duringvarious stages of the fourth fabrication process;

FIGS. 11A-11C illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 10A-10C taken along line A-A′ of FIG. 10Aduring the various stages of the fourth fabrication process; and

FIGS. 12A-12C illustrate corresponding cross sectional views of theintegrated circuit of FIGS. 10A-10C taken along line B-B′ of FIG. 10Aduring the various stages of the fourth fabrication process.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe Figures.

DETAILED DESCRIPTION

In one example, a hybrid subtractive etch/metal fill process forfabricating interconnects is disclosed. As discussed above, conventionaltechniques for fabricating copper interconnects tend to introduceundesirable effects when working with the small feature sizes demandedby current complementary metal-oxide-semiconductor (CMOS) technology.

Examples of the present disclosure provide a hybrid subtractiveetch/metal fill process for fabricating interconnects. In one example, asubtractive etch process is used to pattern the high-density line-spacearea of the integrated circuit (IC), while a metal fill process such aselectroplating or vapor deposition is used to fill large feature areasof the IC, such as areas configured to house electrical pads. Thisapproach allows fine metal interconnects (e.g., smaller thanapproximately forty nanometers) with large grains to be fabricated. Atthe same time, it minimizes adverse effects on the large features areas,which have different etch rates than the high-density line-space areas(due to micro-loading effects).

FIGS. 1A-1G, FIGS. 2A-2G, and FIGS. 3A-3G illustrate an integratedcircuit (IC) 100 during various stages of a first fabrication processperformed according to examples of the present disclosure. As such, whenviewed in sequence, FIGS. 1A-1G, FIGS. 2A-2G, and FIGS. 3A-3G also serveas a flow diagram for the first fabrication process. In particular,FIGS. 1A-1G illustrate top views of the IC 100 during various stages ofthe first fabrication process, while FIGS. 2A-2G illustrate firstcorresponding cross sectional views (i.e., taken along sectional lineA-A′ of FIG. 1A) of the IC 100 of FIGS. 1A-1G during the various stagesof the first fabrication process, and FIGS. 3A-3G illustrate secondcorresponding cross sectional views (i.e., taken along sectional lineB-B′ of FIG. 1A) of the IC 100 of FIGS. 1A-1G during the various stagesof the first fabrication process.

FIGS. 1A-1G, FIGS. 2A-2G, and FIGS. 3A-3G in particular illustrate aone-level integration process. Referring simultaneously to FIG. 1A, FIG.2A, and FIG. 3A the IC 100 begins as a silicon (Si) wafer 102. A firstliner layer 104 is deposited on the wafer 102. In one example, the firstliner layer 104 comprises tantalum (Ta), tantalum nitride (TaN), cobalt(Co), titanium (Ti), titanium nitride (TiN), tungsten (W), ruthenium(Ru), manganese (Mn), manganese oxides (MnOx), or manganese silicates(MnSixOy). A first conductive metal layer 106 is also deposited on thefirst liner layer 104, for example via an electroplating process or avapor deposition process. In one example, the first conductive metallayer 106 comprises copper (Cu). However, the first conductive metallayer 106 could comprise any metal or metal alloy (including, but notlimited to, gold or silver).

As illustrated in FIG. 1B, FIG. 2B, and FIG. 3B, a subtractive etchprocess is next used to pattern the first conductive metal layer 106.That is, a portion of the first conductive metal layer 106 is removeddown to the first liner layer 104. The patterning of the firstconductive metal layer 106 results in a series of thin conductive lines(e.g., interconnects) being formed. Between each pair of conductivelines is a space.

As illustrated in FIG. 1C, FIG. 2C, and FIG. 3C, a second liner layer108 is next deposited on the first conductive metal layer 106 and firstliner layer 104. In one example, the second liner layer 108 is formedfrom the same material as the first liner layer 104 (e.g., Ta, TaN, Co,Ti, TiN, W, Ru, Mn, MnOx, or MnSixOy). A subsequent etch process removesany portions of the first liner layer 104 and the second liner layer 108that do not directly contact the thin conductive lines.

As illustrated in FIG. 1D, FIG. 2D, and FIG. 3D, an interlayerdielectric (ILD) layer 110 is next deposited over the second liner layer108 and the wafer 102. The ILD layer 110 also fills in the trenchesbetween the (lined) conductive lines of the first conductive metal layer106. In one example, the ILD layer 110 comprises a low-k dielectricmaterial. The ILD layer 110 may be formed, for example, from silicondioxide (SiO₂), a low-temperature oxide (LTO), a high-temperature oxide(HTO), or a flowable oxide (FOX). The ILD layer 110 may be planarized,for example using chemical mechanical polishing.

As illustrated in FIG. 1E, FIG. 2E, and FIG. 3E, the ILD layer 110 isnext patterned to create large feature areas 112. That is, a portion ofthe ILD layer 110 is removed down to the wafer 102 to create recesses ortrenches for large features such as electrical pads. In one example, thelarge feature areas 112 may overlap slightly with the high-densityline-space areas (e.g., as evidenced by the fact that some of theconductive lines of the first conductive metal layer 106 extend into thelarge feature areas 112.

As illustrated in FIG. 1F, FIG. 2F, and FIG. 3F, a third liner layer 114is next deposited over the wafer 102 and ILD layer 110. A secondconductive metal layer 116 is then deposited over the third liner layer114, for example via an electroplating process or a vapor depositionprocess. As illustrated, the second conductive metal layer 116 fills inthe large feature areas 112 created in FIGS. 1E and 2E. In one example,the third liner layer 114 is formed from the same material as the firstliner layer 104 and the second liner layer 108. In a further example,the second conductive metal layer 116 is formed from the same conductivematerial (e.g., copper, or other conductive metal or metal alloy) andthe first conductive metal layer 106.

As illustrated in FIG. 1G, FIG. 2G, and FIG. 3G the second conductivemetal layer 116 is next polished down to the ILD layer 110. Thus, thispolishing step removes some of the second conductive metal layer 116 andthe third liner layer 114.

The resultant IC 100 includes a single level of a high-densityline-space area comprised of the conductive lines formed by the firstconductive metal layer 106 and a single level of one or more largefeature areas comprised of the regions (e.g., electrical pads) formed bythe second conductive metal layer 116. The high-density line-space areais formed via the subtractive etch process illustrated in FIGS. 1B, 2B,and 3B, while the large feature areas are formed via the metal fillprocess illustrated in FIGS. 1F, 2F, and 3F. Thus, the large featureareas are largely unaffected by the subtractive etch process that isused to form the interconnects. Moreover, the disclosed process makes itpossible to form the interconnects using any metal or metal alloy,including those that are not feasible to use in conventional damasceneprocesses (e.g., processes that require a small trench to be filled withthe metal).

FIGS. 4A-4H, FIGS. 5A-5H, and FIGS. 6A-6H illustrate an integratedcircuit (IC) 200 during various stages of a second fabrication processperformed according to examples of the present disclosure. As such, whenviewed in sequence, FIGS. 4A-4H, and FIGS. 5A-5H, and FIGS. 6A-6H alsoserve as a flow diagram for the second fabrication process. Inparticular, FIGS. 4A-4H illustrate top views of the IC 200 duringvarious stages of the second fabrication process, while FIGS. 5A-5Hillustrate first corresponding cross sectional views (i.e., taken alongsectional line A-A′ of FIG. 4A) of the IC 200 of FIGS. 4A-4H during thevarious stages of the second fabrication process, and FIGS. 6A-6Hillustrate second corresponding cross sectional views (i.e., taken alongsectional line B-B′ of FIG. 4A) of the IC 200 of FIGS. 4A-4H during thevarious stages of the second fabrication process.

FIGS. 4A-4H, FIGS. 5A-5H, and FIGS. 6A-6H in particular illustrate atwo-level integration process. Referring simultaneously to FIG. 4A, FIG.5A, and FIG. 6A, the IC 200 begins as a silicon (Si) wafer 202. A firstdielectric layer 204 is deposited on the wafer and patterned (e.g.,etched down to the wafer 202) to create a plurality of vias.

As illustrated in FIGS. 4B, 5B, and 6B, a first liner layer 206 is nextdeposited over the first dielectric layer 204. The first liner layer 206lines the vias. The first liner layer 206 may comprise, for example, Ta,TaN, Co, Ti, TiN, W, Ru, Mn, MnOx, or MnSixOy. A first conductive metallayer 208 is next deposited, for example, via electroplating or vapordeposition, over the first liner layer 206. The first conductive metallayer 208 fills the vias. The first conductive metal layer 208 maycomprise copper. However, the first conductive metal layer 208 couldcomprise any metal or metal alloy (including, but not limited to, goldor silver).

As illustrated in FIGS. 4C, 5C, and 6C, a subtractive etch process isused to etch the first conductive metal layer 208 down to the firstliner layer 206, in all areas except for those above the vias; theseareas become a high-density line-space area. The portion of the firstconductive metal layer 208 that resides above the vias remains andextends above the first liner layer 206, forming a plurality ofconductive lines (e.g., interconnects). Between each pair of conductivelines is a trench.

As illustrated in FIGS. 4D, 5D, and 6D, a second liner layer 210 isdeposited over the first conductive metal layer 208 and the first linerlayer 206. The second liner layer 210 may comprise the same material asthe first liner layer 206. The second liner layer 210 and the firstliner layer 206 are then etched down to the first dielectric layer 204,so that the only remaining portions of the second liner layer 210 arethe portions that line the conductive lines, and the only remainingportions of the first liner layer 206 are the portions that line thevias.

As illustrated in FIGS. 4E, 5E, and 6E, an interlayer dielectric (ILD)layer 212 is next deposited over the second liner layer 210 and thefirst dielectric layer 204. The ILD layer 212 also fills in the trenchesbetween the (lined) conductive lines of the first conductive metal layer208. In one example, the ILD layer 212 comprises a low-k dielectricmaterial. The ILD layer 212 may be formed, for example, from silicondioxide (SiO₂), a low-temperature oxide (LTO), a high-temperature oxide(HTO), or a flowable oxide (FOX). The ILD layer 212 may be planarized,for example using chemical mechanical polishing.

As illustrated in FIGS. 4F, 5F, and 6F, the ILD layer 212 is patterned.In one example, patterning involves removing portions of the ILD layer212 to create large feature areas. Thus, a portion of the ILD layer 212is removed down to the first dielectric layer 204 to create recesses ortrenches for large features such as electrical pads. In one example, thelarge feature areas may overlap slightly with the high-densityline-space areas (e.g., as evidenced by the fact that some of theconductive lines of the first conductive metal layer 208 extend into thelarge feature areas).

As illustrated in FIGS. 4G, 5G, and 6G, a third liner layer 214 is nextdeposited over the first dielectric layer 204 and ILD layer 212. Asecond conductive metal layer 216 is then deposited over the third linerlayer 214, for example via an electroplating process or a vapordeposition process. As illustrated, the second conductive metal layer216 fills in the large feature areas created in FIGS. 3F and 4F. In oneexample, the third liner layer 214 is formed from the same material asthe first liner layer 206 and the second liner layer 210. In a furtherexample, the second conductive metal layer 216 is formed from the sameconductive material (e.g., copper, or other conductive metal or metalalloy) and the first conductive metal layer 208.

As illustrated in FIG. 4H, FIGS. 5H, and 6H the second conductive metallayer 216 is next polished down to the ILD layer 212. Thus, thispolishing step removes some of the second conductive metal layer 216 andthe third liner layer 214.

The resultant three-dimensional IC 200 includes two levels; a firstlevel including a high-density line-space area comprised of theconductive lines and large feature areas (e.g., electrical pads) and asecond level including through-silicon vias for connecting the IC toother wafers. The vias and the high-density line-space area are formedvia the subtractive etch processes illustrated in FIGS. 4C, 5C, and 6C.The large feature areas are formed via the metal fill processillustrated in FIGS. 4G, 5G, and 6G. Thus, the large feature areas arelargely unaffected by the subtractive etch process that is used to formthe interconnects and vias. An advantage of the process illustrated inFIGS. 4A-4H, 5A-5H, and 6A-6H is that the interface between the vias andthe high-density conductive lines is plated in one step (i.e., asillustrated in FIGS. 4C, 5C, and 6C), as a continuous line. In caseswhere the resistance between a large via and a large electrical pad ishigh, the contacts can be sized to mitigate the high resistance.

The process illustrated in FIGS. 4A-4H, 5A-5H, and 6A-6H can be adaptedto fabricate ICs having additional levels. FIGS. 7A-7D, FIGS. 8A-8D, andFIGS. 9A-9D for instance, illustrate a multi-level integrated circuit(IC) 300 during various stages of a third fabrication process performedaccording to examples of the present disclosure. As such, when viewed insequence, FIGS. 7A-7D, FIGS. 8A-8D, and FIG. 9A-9D also serve as a flowdiagram for a portion of the third fabrication process. In particular,FIGS. 7A-7D illustrate top views of the IC 300 during various stages ofthe third fabrication process, while FIGS. 8A-8D illustrate firstcorresponding cross sectional views (i.e., taken along sectional lineA-A′ of FIG. 7A) of the IC 300 of FIGS. 7A-7D during the various stagesof the third fabrication process, and FIGS. 9A-9D illustrate secondcorresponding cross sectional views (i.e., taken along sectional lineB-B′ of FIG. 7A) of the IC 300 of FIGS. 7A-7D during the various stagesof the third fabrication process.

Referring simultaneously to FIG. 7A, FIG. 8A, and FIG. 9A the IC 300undergoes a series of fabrication steps similar to those illustrated inFIGS. 4A-4H, FIGS. 5A-5H, and FIG. 6A-6H. Thus, FIGS. 7A, 8A, and 9Aillustrate the IC 300 at an intermediate step in the fabricationprocess. At this intermediate step, the IC 300 includes a wafer 302, adielectric layer 304 deposited on the wafer 302, and a first pluralityof vias 306 formed in the dielectric layer 304. The first plurality ofvias 306 is coupled to a plurality of conductive lines 308, which is inturn coupled to a second plurality of vias 310. In one example, thefirst plurality of vias 306, the plurality of conductive lines 308, andthe second plurality of vias 310 are formed from a conductive metal,such as copper. However, the first plurality of vias 106, the pluralityof conductive lines 308, and the second plurality of vias 310 couldcomprise any metal or metal alloy (including, but not limited to, goldor silver). The first plurality of vias 306, the plurality of conductivelines 308, and the second plurality of vias 310 are all lined by liners312 (which may comprise, for example, tantalum (Ta), tantalum nitride(TaN), cobalt (Co), manganese (Mn), manganese oxides (MnOx), ormanganese silicates (MnSixOy)). In the step illustrated in FIGS. 5A and6A, an interlayer dielectric (ILD) layer 314 is deposited over thedielectric layer 304 and over the plurality of conductive lines 308 andthe second plurality of vias 310. The ILD layer 314 may be polished orplanarized after deposition.

As illustrated in FIGS. 7B, 8B, and 9B, the ILD layer 314 is etched downto the dielectric layer 304 in the areas surrounding some of the firstplurality of vias 306 (i.e., the larger vias of the first plurality ofvias 306). In addition, the metal in the second plurality of vias 310 isremoved.

As illustrated in FIGS. 7C, 8C, and 9C, a liner layer 316 is nextdeposited over the ILD layer 314. The liner layer 316 lines the areas inwhich the ILD layer 314 and the metal was removed in FIGS. 5B and 6B(i.e., the larger vias of the first plurality of vias 306 and the secondplurality of vias 310). Next, a metal fill process such aselectroplating or vapor deposition is used to deposit a metal layer 318over the liner layer 316. The metal layer 318 comprises a conductivemetal such as copper. However, the metal layer 318 could comprise anymetal or metal alloy (including, but not limited to, gold or silver).

As illustrated in FIGS. 7D, 8D, and 9D, the metal layer 318 and theliner layer 316 are polished or planarized (e.g., using chemicalmechanical planarization) down to the ILD layer 314.

FIGS. 10A-10C, FIGS. 11A-11C, and FIGS. 12A-12C illustrate a multi-levelintegrated circuit (IC) 400 during various stages of a fourthfabrication process performed according to examples of the presentdisclosure. As such, when viewed in sequence, FIGS. 10A-10C, FIGS.11A-11C, and FIGS. 12A-12C also serve as a flow diagram for a portion ofthe fourth fabrication process. In particular, FIGS. 10A-10C illustratetop views of the IC 400 during various stages of the fourth fabricationprocess, while FIGS. 11A-11C illustrate first corresponding crosssectional views (i.e., taken along sectional line A-A′ of FIG. 10A) ofthe IC 400 of FIGS. 10A-10C during the various stages of the fourthfabrication process, and FIGS. 12A-12C illustrate second correspondingcross sectional views (i.e., taken along sectional line B-B′ of FIG.10A) of the IC 400 of FIGS. 10A-10C during the various stages of thefourth fabrication process.

Referring simultaneously to FIG. 10A, FIG. 11A, and FIG. 12A, the IC 400undergoes a series of fabrication steps similar to those illustrated inFIGS. 4A-4H, FIGS. 5A-5H, and FIGS. 6A-6H. Thus, FIGS. 10A, 11A, and 12Aillustrate the IC 400 at an intermediate step in the fabricationprocess. At this intermediate step, the IC 400 includes a wafer 402, adielectric layer 404 deposited on the wafer 402, and a first pluralityof vias 410 formed in the dielectric layer 404. The first plurality ofvias 410 is coupled to a plurality of conductive lines 412. In oneexample, the first plurality of vias 410 and the plurality of conductivelines 412 are formed from a conductive metal, such as copper. However,the first plurality of vias 410 and the plurality of conductive lines412 could comprise any metal or metal alloy (including, but not limitedto, gold or silver). The first plurality of vias 410 and the pluralityof conductive lines 412 are all lined by liners 408 (which may comprise,for example, tantalum (Ta), tantalum nitride (TaN), cobalt (Co),manganese (Mn), manganese oxides (MnOx), or manganese silicates(MnSixOy)). An interlayer dielectric (ILD) layer 406 is deposited overthe dielectric layer 404 and the plurality of conductive lines 412.

In the step illustrated in FIGS. 10A, 11A, and 12A, the ILD layer 406 isetched down to the dielectric layer 404 in the areas surrounding some ofthe first plurality of vias 410 (i.e., the areas above the larger viasof the first plurality of vias 410) and in the areas surrounding theplurality of conductive lines 412. Thus, the IC 400 of FIGS. 10A, 11A,and 12A closely resembles the IC 300 of FIGS. 7B, 8B, and 9B; however,an additional amount of the ILD layer 406 (i.e., the portionssurrounding the plurality of conductive lines 412) is removed in FIGS.10A, 11A, and 12A to create trenches around the plurality of conductivelines.

As illustrated in FIGS. 10B, 11B, and 12B, a liner layer 414 is nextdeposited over the ILD layer 406. The liner layer 414 lines the areas inwhich the ILD layer 406 was removed in FIGS. 10A, 11A, and 12A (i.e.,the areas above the larger vias of the first plurality of vias 410 andthe areas surrounding the plurality of conductive lines 412). Next, ametal fill process such as electroplating or vapor deposition is used todeposit a metal layer 416 over the liner layer 414. In one embodiment,different metals may be used to fill the trenches surrounding theplurality of conductive lines 412 and the areas above the larger vias ofthe first plurality of vias 410). In one example, at least one of themetals comprises a conductive metal such as copper. However, the metalscould comprise any metal or metal alloy (including, but not limited to,gold or silver).

As illustrated in FIGS. 10C, 11C, and 12C, the metal layer 416 and linerlayer 414 are polished or planarized (e.g., using chemical mechanicalplanarization) down to the ILD layer 406.

Although various embodiments which incorporate the teachings of thepresent invention have been shown and described in detail herein, thoseskilled in the art can readily devise many other varied embodiments thatstill incorporate these teachings.

What is claimed is:
 1. An integrated circuit comprising: a wafer; alayer of dielectric material deposited on the wafer; a plurality ofconductive lines formed on the layer of dielectric material; a firstplurality of vias coupled to the plurality of conductive lines andextending through the layer of dielectric material, wherein interfacesbetween the plurality of conductive lines and at least some of the firstplurality of vias are formed as continuous lines of metal; and a largefeature area formed from a conductive metal or a conductive metal alloy,wherein the large feature area is separate from the first plurality ofvias and is positioned outside of the plurality of conductive lines,wherein the large feature area includes an electrical pad.
 2. Theintegrated circuit of claim 1, wherein the plurality of conductive linesand the first plurality of vias are formed from a metal or a metalalloy.
 3. The integrated circuit of claim 1, wherein at least one of theplurality of conductive lines or the first plurality of vias is formedfrom copper.
 4. The integrated circuit of claim 1, wherein at least oneof the plurality of conductive lines or the first plurality of vias isformed from gold.
 5. The integrated circuit of claim 1, wherein at leastone of the plurality of conductive lines or the first plurality of viasis formed from silver.
 6. The integrated circuit of claim 1, wherein theplurality of conductive lines have dimensions smaller than fortynanometers.
 7. The integrated circuit of claim 1, wherein the largefeature area is formed from copper.
 8. The integrated circuit of claim1, wherein the large feature area is formed from gold.
 9. The integratedcircuit of claim 1, wherein the large feature area is formed fromsilver.
 10. The integrated circuit of claim 1, wherein the large featureoverlaps with at least one of the plurality of conductive lines.
 11. Theintegrated circuit of claim 1, wherein at least one via of the firstplurality of vias is positioned below the large feature area.
 12. Theintegrated circuit of claim 1, wherein the large feature area is formedfrom the same material as the plurality of conductive lines and thefirst plurality of vias.
 13. The integrated circuit of claim 1, furthercomprising: a liner positioned between the layer of dielectric materialand each via of the first plurality of vias.
 14. The integrated circuitof claim 1, further comprising: a liner positioned between thedielectric layer and each line of the plurality of conductive lines. 15.The integrated circuit of claim 1, further comprising: an interlayerdielectric layer deposited over the layer of dielectric material; and asecond plurality of vias coupled to the plurality of conductive linesand extending through the interlayer dielectric layer.
 16. Theintegrated circuit of claim 15, wherein the second plurality of vias isformed from the same material as the first plurality of vias and theplurality of conductive lines.
 17. The integrated circuit of claim 1,wherein the continuous lines of metal are formed from a single metallicmaterial that makes up both the plurality of conductive lines and the atleast some of the first plurality of vias.
 18. The integrated circuit ofclaim 17, wherein the single metallic material is continuously platedinto regions of the plurality of conductive lines and the at least someof the first plurality of vias simultaneously.